Aug/100
PN2222A Review
- PN2222A Planar Passivated Epitaxial NPN Silicon Transistor. 40V – 400mA.
PN2222A Military/High-Rel:NV(BR)CEO (V):40V(BR)CBO (V):75I(C) Max. (A):600mAbsolute Max. Power Diss. (W):625mMaximum Operating Temp (øC):150õI(CBO) Max. (A):10nØ@V(CBO) (V) (Test Condition):60.0h(FE) Min. Current gain.:100h(FE) Max. Current gain.:300@I(C) (A) (Test Condition):150m@V(CE) (V) (Test Condition):10f(T) Min. (Hz) Transition Freq:300M@I(C) (A) (Test Condition):20m@V(CE) (V) (Test Condition):20V(CE)sat Max. (V):1.0@I(C) (A) (Test Condition):500m@I(B) (A) (Test Condition):50mh(fe) Min
Price: $ 0.10
Aug/100
MPS2222 Review
- MPS2222 Planar passivated epitaxial NPN silicon transistor. 30V 400mA.
MPS2222 t(d) Max. (s) Delay time.:10nf(T) Min. (Hz) Transition Freq:250M@I(C) (A) (Test Condition):20mV(BR)CBO (V):60V(BR)CEO (V):30t(f) Max. (s) Fall time.:60n@V(CE) (V) (Test Condition):20Absolute Max. Power Diss. (W):625m’@I(C) (A) (Test Condition):150mI(CBO) Max. (A):10nh(FE) Min. Current gain.:50V(CE)sat Max. (V):.40@V(CE) (V) (Test Condition):10@I(B) (A) (Test Condition):50m@I(C) (A) (Test Condition):500m@V(CBO) (V) (Test Condition):50I(C) Max. (A):600mt(r) Max. (s) Rise time:25nt(s) Max.
Price: $ 0.32
Aug/100
PN2222
- PN2222 Planar Passivated Epitaxial NPN Silicon Transistor. 30V – 400mA.
PN2222 Military/High-Rel:NV(BR)CEO (V):30V(BR)CBO (V):60I(C) Max. (A):600mAbsolute Max. Power Diss. (W):625mMaximum Operating Temp (øC):150õI(CBO) Max. (A):10nØh(FE) Min. Current gain.:100@I(C) (A) (Test Condition):150m@V(CE) (V) (Test Condition):10f(T) Min. (Hz) Transition Freq:250MV(CE)sat Max. (V):1.6@I(C) (A) (Test Condition):500m@I(B) (A) (Test Condition):50mt(d) Max. (s) Delay time.:10nt(r) Max. (s) Rise time:25nt(s) Max. (s) Storage time.:225nt(f) Max. (s) Fall time.:60nPackage Style:T
Price: $ 2.50
Aug/100
MPQ2222A
- MPQ2222A Independent Transistor Array
MPQ2222A Nota Bene: Image is not true representation of part Nota Bene: Image is not true representation of part
Price: $ 2.39
Aug/100
2N2222A
- 2N2222A NPN Small Signal General Purpose Amplifier & Switch.
2N2222A Military/High-Rel:NV(BR)CEO (V):40V(BR)CBO (V):75I(C) Max. (A):800mAbsolute Max. Power Diss. (W):500mMaximum Operating Temp (øC):200õI(CBO) Max. (A):10n@V(CBO) (V) (Test Condition):60h(FE) Min. Current gain.:100h(FE) Max. Current gain.:300@I(C) (A) (Test Condition):150m@V(CE) (V) (Test Condition):10f(T) Min. (Hz) Transition Freq:300M@I(C) (A) (Test Condition):20m@V(CE) (V) (Test Condition):20V(CE)sat Max. (V):1.0@I(C) (A) (Test Condition):500m@I(B) (A) (Test Condition):50mh(fe) Min. SS
Price: $ 0.18
Aug/100
Commercial Transistors: 2n2222, Bc548, 2n3055, 2n7000, 2n3904, 2n2907, 2n3906, Bs170, Af107, Ck722 Review
Purchase includes free access to book updates online and a free trial membership in the publisher’s book club where you can select from more than a million books without charge. Excerpt: The 2N2222, often referred to as the ‘quad two’ transistor, is a small, common NPN BJT transistor used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. It was originally made in the
List Price: $ 14.14
Price: $ 14.14
Aug/100
Fairchild Semiconductor General Purpose NPN Thru-Hole Transistor TO-92 AMMO (Bag of 10) Review
- Case Size: TO-92 AMMO
- Application: GENL PURP
- Polarity: NPN
- Power Dissipation: 625mW
Fairchild Semiconductor General Purpose NPN Thru-Hole Transistor TO-92 AMMO (Bag of 10)
Price: $ 2.77